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| APTGT150DU120TG Dual common source Fast Trench + Field Stop IGBT(R) Power Module C1 Q1 G1 C2 VCES = 1200V IC = 150A @ Tc = 80C Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Q2 G2 E1 E2 NTC1 E NTC2 Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant Max ratings 1200 220 150 350 20 690 300A @ 1150V APTGT150DU120TG - Rev 1 G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Unit V A V W July, 2006 1-5 Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT150DU120TG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 VGE = 15V Tj = 125C VBus = 600V IC = 150A Tj = 125C R G = 2.2 Min Typ 10.7 0.56 0.48 280 40 420 75 290 45 520 90 14 Max Unit nF ns ns mJ 16 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 150A 150 1.6 1.6 170 280 15 29 7 12 2.1 V ns C mJ July, 2006 2-5 APTGT150DU120TG - Rev 1 IF = 150A VR = 600V di/dt =3000A/s www.microsemi.com APTGT150DU120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.18 0.34 150 125 125 4.7 160 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 2500 -40 -40 -40 2.5 V C N.m g SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT150DU120TG - Rev 1 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : July, 2006 APTGT150DU120TG Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 300 250 TJ =125C TJ = 125C VGE=17V VGE=13V VGE=15V VGE=9V 300 250 IC (A) TJ=25C 200 150 100 50 0 0 1 2 VCE (V) Transfert Characteristics IC (A) 200 150 100 50 0 3 4 0 1 2 VCE (V) 3 4 Energy losses vs Collector Current 40 VCE = 600V VGE = 15V RG = 2.2 T J = 125C Eoff Eon Er 300 250 200 IC (A) 150 100 50 0 5 T J=25C 30 E (mJ) TJ=125C 20 10 0 TJ=125C 6 7 8 9 10 11 12 0 50 100 150 IC (A) 200 250 300 VGE (V) Switching Energy Losses vs Gate Resistance 40 35 30 E (mJ) 25 20 15 10 5 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14 16 Er VCE = 600V VGE =15V IC = 150A TJ = 125C Eon Reverse Bias Safe Operating Area 350 300 250 IC (A) 200 150 100 50 0 0 400 800 V CE (V) 1200 1600 V GE=15V T J=125C RG=2.2 Eoff maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W) 0.16 0.12 0.5 0.08 0.04 0 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9 0.7 IGBT 0.00001 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT150DU120TG - Rev 1 July, 2006 APTGT150DU120TG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 10 40 70 100 130 IC (A) 160 190 220 Hard Switching ZCS ZVS VCE=600V D=50% RG=2.2 TJ =125C TC=75C Forward Characteristic of diode 300 250 200 IC (A) 150 100 50 0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 TJ =125C TJ=25C TJ=125C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0.3 Diode 0 0.00001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT150DU120TG - Rev 1 July, 2006 |
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